4.3 Article

Low-threshold electrically pumped ultraviolet laser diode

期刊

JOURNAL OF MATERIALS CHEMISTRY
卷 21, 期 9, 页码 2848-2851

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ROYAL SOC CHEMISTRY
DOI: 10.1039/c0jm04233a

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资金

  1. National Basic Research Program of China [2011CB302005]
  2. Natural Science Foundation of China [10774132, 11074248, 60976040]
  3. Chinese Academy of Sciences [YZ200903]
  4. Science and Technology Developing Project of Jilin Province [20090124]

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Electrically pumped ultraviolet lasing has been realized in a Au/MgO/MgZnO/n-ZnO structure. The lasing is located at around 330 nm. Notably the threshold of the lasing is about 30.0 mA, over one order of magnitude smaller than the corresponding values reported before.

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