Article
Nanoscience & Nanotechnology
Lihua He, Enlong Li, Weixin He, Yujie Yan, Shuqiong Lan, Rengjian Yu, Huipeng Chen, Tailiang Guo
Summary: The novel layered hybrid structure OTFT nonvolatile memory combines the advantages of ferroelectric and floating gate memory, exhibiting high on-state current, low off-state current, excellent switch ratio, and retention characteristic, as well as a superior memory window. This fine-structured OTFT memory opens up a unique path to meet the growing demand in the microelectronic industry.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Analytical
Jinjun Bai, Wei Shen, Jia Shi, Wei Xu, Shusheng Zhang, Shengjiang Chang
Summary: This study proposes a tunable terahertz metamaterial absorber based on a graphene floating gate, which has non-volatile and anti-interference properties. Simulation results show that the absorber has a wide absorption bandwidth and continuously adjustable absorption rate, making it suitable for applications in imaging, sensing, and photoelectric detection.
Article
Chemistry, Multidisciplinary
Hoyeon Cho, Donghyun Lee, Kyungmin Ko, Der-Yuh Lin, Huimin Lee, Sangwoo Park, Beomsung Park, Byung Chul Jang, Dong-Hyeok Lim, Joonki Suh
Summary: Two-dimensional materials and their heterostructures, such as van der Waals (vdW) integrated synaptic transistors, offer advantages such as near-atom thickness, superior electrostatic control, and adjustable device architecture. In this study, a double-floating-gate (DFG) device with multistacked floating gates was developed, showcasing improved nonvolatile memory performance and effective modulation of trapped charge density. The DFG transistor demonstrated improved weight update profile for long-term potentiation/depression synaptic behavior, achieving high classification accuracies in neural network tasks.
Article
Chemistry, Multidisciplinary
Muhammad Naqi, Nayoung Kwon, Sung Hyeon Jung, Pavan Pujar, Hae Won Cho, Yong In Cho, Hyung Koun Cho, Byungkwon Lim, Sunkook Kim
Summary: The research presents a low-temperature processed three-terminal thin-film transistor non-volatile memory device using indium gallium zinc oxide semiconductor and gold nanoparticles as a floating gate layer, achieving reliable memory operations with a high memory window and stable endurance. The device demonstrates excellent properties in terms of large memory window, stable endurance, and long retention time, showing promising applications in futuristic non-volatile memory technology.
Article
Nanoscience & Nanotechnology
Wei-Chen Yang, Yan-Cheng Lin, Ming-Yun Liao, Li-Che Hsu, Jeun-Yan Lam, Tsung-Han Chuang, Guan-Syuan Li, Yun-Fang Yang, Chu-Chen Chueh, Wen-Chang Chen
Summary: In this study, a novel photonic transistor memory is successfully developed with dual manipulation of photo-writing and photo-erasing, showcasing stable switching cycles and long-term memory retention. Clever utilization of complementary light absorption between photoactive materials and the hybrid floating gate enables multilevel functional behavior and potential for flexible photonic memory devices in the future.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
Ya-Hui Chao, Jian-Cheng Chen, Dong-Lin Yang, You-Jie Tseng, Chao-Hsien Hsu, Jung-Yao Chen
Summary: By adding phenylethylammonium bromide (PEABr) to formamidinium lead bromide perovskite (FAPbBr(3)), the crystal orientation of quasi-2D perovskite is significantly improved, resulting in a higher charge transfer efficiency. The non-volatile flash photomemory shows an ON/OFF current ratio of 10^4, a low photo-programming time of 5 ms under light intensity of 0.85 mW cm(-2), a charge transfer rate of 0.063 ns(-1), and a data storage capacity of over 7 bits (128 levels) in one cell.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Engineering, Multidisciplinary
Yogita Arora, Bhawna Aggarwal, Jasdeep Kaur
Summary: This paper presents a low voltage and low power CDTA based on FGMOS and QFGMOS. The use of QFGMOS eliminates issues such as confined floating gate and degraded gain-bandwidth product.
JOURNAL OF ENGINEERING RESEARCH
(2022)
Article
Engineering, Electrical & Electronic
Zijia Su, Hengxiao Cheng, Xiyu Sun, Haiding Sun, Chengjie Zuo
Summary: In this study, a novel floating gate heterostructure based on 2D materials is proposed, where WSe2-MoS2 forms a p-n diode as the channel and multilayer graphene serves as the floating gate. The device demonstrates a large memory window, high ON/OFF ratio, stable retention, and cyclic endurance. Additionally, it achieves a high max-min conductance ratio, low nonlinearity coefficients, and record low energy consumption when used as a neural synapse. This work presents a new design for 2D material heterostructures in the implementation of neural synapses for neuromorphic computing.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Physical
Qingyan Li, Tengteng Li, Yating Zhang, Hongliang Zhao, Jie Li, Jianquan Yao
Summary: Researchers demonstrated a high-performance hybrid floating gate memory with a large memory window, showing the enhanced effect of the sandwich structure on the memory window. The new memory device exhibited admirable endurance and retention characteristics.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Chemistry, Physical
Yi-Yueh Chen, Feng-Ming Lee, Yu-Yu Lin, Chih-Hsiung Lee, Wei-Chen Chen, Che-Kai Shu, Su-Jien Lin, Shou-Yi Chang, Chih-Yuan Lu
Summary: Two new types of floating gates composed of pn-type polysilicon or np-type polysilicon have been developed in this study to lower charge leakage and improve the operation performance of memory devices. By forming an n-p junction in the floating gate, the sheet resistance is increased and charge leakage is reduced, leading to improved performance without the need for new materials or changes to the physical structure.
Article
Chemistry, Multidisciplinary
Haojie Lai, Yang Zhou, Huabin Zhou, Ning Zhang, Xidong Ding, Pengyi Liu, Xiaomu Wang, Weiguang Xie
Summary: This study demonstrates an optoelectronic memory device composed of a MoS2/hBN/2D-RPP (MBR) van der Waals heterostructure. The MBR device exhibits unique light-controlled charge-storage characteristics, with advantages including high memory window, high on/off ratio, negligible degeneration, multiple program/erase cycles, and fast write speed. Additionally, depending on the initial states, the MBR optoelectronic memory can be programmed in both positive photoconductivity (PPC) and negative photoconductivity (NPC) modes, with multiple distinct resistance states.
ADVANCED MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Stefan D. Ilic, Marko S. Andjelkovic, Russell Duane, Alberto J. Palma, Milija Sarajlic, Srboljub Stankovic, Goran S. Ristic
Summary: The study revealed the dose rate dependence of the floating gate dosimeter and its stable dosimetric and reprogramming characteristics under a constant dose rate. The absorbed dose did not affect the threshold voltage readings drift after irradiation steps, indicating promising potential for dosimetric applications over multiple irradiation cycles.
MICROELECTRONICS RELIABILITY
(2021)
Article
Chemistry, Multidisciplinary
Hao Wu, Yinghao Cui, Jinlong Xu, Zhong Yan, Zhenda Xie, Yonghong Hu, Shining Zhu
Summary: In this study, a multifunctional electronic device based on two-dimensional heterostructure was successfully designed and fabricated, which integrates logic operations, data storage, and rectification functions, providing inspiration for the design of next-generation computation beyond the von Neumann architecture.
Article
Nanoscience & Nanotechnology
Yongwoo Lee, Jinsu Yoon, Ju Won Jeon, Hanbin Lee, Jeonghee Ko, Jong-Ho Bae, Dae Hwan Kim, Dong Myong Kim, Sung-Jin Choi
Summary: In this paper, all-solution-processed carbon nanotube (CNT) floating gate memories (FGMs) are demonstrated. By controlling the metallic CNT (m-CNT) floating gate density, the electrical and memory performance of the FGMs are evaluated. The results show that the m-CNT floating gate density is a critical design variable for achieving all-CNT FGMs or their memory modules.
ACS APPLIED NANO MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Hongsheng Hu, Zhongyuan Ma, Xinyue Yu, Tong Chen, Chengfeng Zhou, Wei Li, Kunji Chen, Jun Xu, Ling Xu
Summary: In this study, the carrier injection efficiency of 3D NAND flash memory based on a nanocrystalline silicon floating gate is reported. It is found that the control layer thickness of the nanocrystalline silicon floating gate can influence the direction of the C-V hysteresis curve. Thicker control layers enhance carrier injection efficiency, while thinner control layers lead to carrier injection from the top electrode into the defect state of the SiNx control layer.
