期刊
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
卷 324, 期 8, 页码 1649-1654出版社
ELSEVIER
DOI: 10.1016/j.jmmm.2011.12.030
关键词
Diluted magnetic semiconductor; ZnxMn1-xO:N; Room-temperature ferromagnetism
资金
- State Key Program for Basic Research of China [2011CB302003]
- Project of High Technology Research & Development of China [2007AA03Z404]
- National Natural Science Foundation of China [60990312, 61025020, 61073101]
- National Science Foundation of China [10804017]
- National Science Foundation of Jiangsu Province of China [BK2010421]
The influences of Mn doping on the structural quality of the ZnxMn1-xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for ZnxMn1-xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different T-C should explain that the magnetic transition in field-cooled magnetization of Zn1-xMnxO:N films at low temperature is caused by the strong p-d exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O. (C) 2011 Elsevier B.V. All rights reserved.
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