期刊
JOURNAL OF LUMINESCENCE
卷 129, 期 9, 页码 969-972出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jlumin.2009.04.021
关键词
ZnO films; Ag-doped; Photoluminescence; Ultrasonic spray pyrolysis
类别
资金
- China National Natural Science Research Foundation
ZnO:Ag films were grown on Si (100) substrates by ultrasonic spray pyrolysis at various substrate temperatures. The effect of deposition temperature on the structural and the room temperature photoluminescence (RT-PL) properties of ZnO:Ag films was studied. With the deposition temperature rising to 550 degrees C, the intensity of the near-band edge (NBE) emission at 378 nm decreased and a new emission peak at 399 nm was observed. On the basis of the X-ray diffraction pattern (XRD), the X-ray photoelectron (XPS) spectra of ZnO:Ag films, and the effects of annealing on the PL, we suggest that the 399 nm emission should be attributed to the electron transition from the conduction band to Ag-zn-related complexes defects radiative centers above the valence band. (C) 2009 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据