期刊
JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 31, 期 21, 页码 3361-3367出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2013.2281823
关键词
CMOS-compatible plasmonic waveguides; Dielectric-loaded waveguides; long range surface plasmon; plasmonic waveguides
资金
- Danish Council for Independent Research [09-072949 ANAP]
CMOS-compatible long-range dielectric-loaded plasmonic waveguides featuring long propagation lengths and strong mode confinements are designed and studied using the finite-element method. The waveguide composition includes a Si3N4 ridge on the top of a thin metal stripe deposited on a silicon-on-insulator (SOI) wafer with a thin top SiO2 layer produced by thermal oxidation. All the materials chosen in the design are compatible with complementary metal-oxide-semiconductor technology and can be integrated with plasmonic, electronic and photonic components. Influence of various waveguide parameters on the waveguide characteristics is analyzed, including the thicknesses of the Si layer and the SiO2 layers, the dimension of the ridge, as well as the parameters of the metal stripe. It is found that, at the telecom wavelength of 1.55 mu m, the propagation length of CMOS-plasmonic waveguides can reach 1.07 mm with a lateral mode confinement of similar to 1.18 mu m and 4.43 mm with a lateral mode width of similar to 2.32 mu m. The bending loss and coupling length are both calculated to evaluate the applicability of the proposed device for high density integration and a figure of merit is proposed to show the tradeoff between the propagation length and the lateral mode width in the application of plasmonic devices.
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