期刊
OPTICS EXPRESS
卷 23, 期 21, 页码 27683-27689出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.23.027683
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资金
- National Research Foundation of Singapore [NRF-CRP13-2014-02]
- NTU-A*STAR Silicon Technologies Centre of Excellence [112 3510 0003]
- NSFC [61274086]
Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (nIGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the optically-filtering function of the NiO layer. (C) 2015 Optical Society of America
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