Si Doping of GaN in Hydride Vapor-Phase Epitaxy

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

(2012) R M Farrell et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping

(2011) Armin Dadgar et al.   Applied Physics Express

On the strain in n-type GaN

(2011) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Growth of GaN boules via vertical HVPE

(2011) E. Richter et al.   JOURNAL OF CRYSTAL GROWTH

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

(2010) Yuichi Oshima et al.   JOURNAL OF CRYSTAL GROWTH

Strain relaxation in AlGaN multilayer structures by inclined dislocations

(2009) D. M. Follstaedt et al.   JOURNAL OF APPLIED PHYSICS

Bulk GaN crystals grown by HVPE

(2009) Kenji Fujito et al.   JOURNAL OF CRYSTAL GROWTH

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

High-quality nonpolarm-plane GaN substrates grown by HVPE

(2008) Kenji Fujito et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy

(2007) V. Darakchieva et al.   JOURNAL OF CRYSTAL GROWTH