期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 40, 期 12, 页码 2382-2387出版社
SPRINGER
DOI: 10.1007/s11664-011-1755-1
关键词
Thin films; x-ray diffraction; atomic force microscopy; optical properties; electrical properties
资金
- Inter University Accelerator Center, New Delhi, India [UFUP-41313]
- DST, Government of India [DST/TSG/PT/2008/20]
Niobium (Nb) doping (0 at.% to 3 at.%) in ZnO thin films prepared by the chemical spray pyrolysis method at a substrate temperature of 400 degrees C enhances the optical and electrical properties but deteriorates the structural quality of the films. The films are polycrystalline with hexagonal structure having a preferential orientation along the (002) crystallographic direction. The film doped with 3 at.% Nb demonstrates a maximum average transmittance of similar to 83% in the visible region. A strong blue emission is recorded for both pure and doped films, and the intensity is substantially enhanced with Nb doping due to interface and valence-band transitions. Vacuum annealing at 400 degrees C for 60 min improves the electrical characteristics of the films, and the highest mobility of 71 cm(2)/V s is achieved for the 1 at.% Nb-doped ZnO films.
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