4.5 Article Proceedings Paper

Doping and Defect Structure of Tetradymite-Type Crystals

期刊

JOURNAL OF ELECTRONIC MATERIALS
卷 39, 期 9, 页码 2162-2164

出版社

SPRINGER
DOI: 10.1007/s11664-009-0986-x

关键词

Tetradymite semiconductors; doping; point defects; physical properties

向作者/读者索取更多资源

Nonstoichiometry of tetradymite-type crystals A (2) (V) B (3) (VI) that are grown from stoichiometric melts leads to the formation of native defects in the crystal lattice (predominantly antisite defects, A (B) (-1) and vacancies V (B) (+2) in the anion sublattice). This paper summarizes the basic ideas concerning a point defect model in A (2) (V) B (3) (VI) crystals. It turns out that a variety of doping elements interact with the native defects. Such interactions alter the concentration of free charge carriers, affect the doping efficiency, and modify the transport properties. Detailed understanding of the defect structure in tetradymite-type crystals is very important as it impacts on the efficiency of these materials when used as active elements in thermoelectric coolers.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据