期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 39, 期 5, 页码 595-600出版社
SPRINGER
DOI: 10.1007/s11664-009-1017-7
关键词
ZnO; Schottky diode; homoepitaxy; defects; admittance spectroscopy; photoluminescence; photoluminescence (PL); thermal admittance spectroscopy (TAS)
资金
- European Social Fund
- Deutsche Forschungsgemeinschaft [762]
- Schwerpunktprogramm SPP [1136]
- Graduate School Leipzig School of Natural Sciences-Building with Molecules and Nano-objects (BuildMoNa)
Nominally undoped homoepitaxial ZnO thin films grown with pulsed-laser deposition at various oxygen partial pressures (3 x 10(-4)-0.1 mbar) were investigated with respect to shallow donors and compensation. From x-ray diffraction and photoluminescence studies, a correlation of the oxygen partial pressure and the strain in the samples was found. Capacitance-voltage and thermal admittance measurements, using PtO (x) -Schottky diodes, revealed a higher compensation for increasing oxygen partial pressure. A shallow donor level with a thermal activation energy of similar to 40 meV was observed by thermal admittance spectroscopy. This defect level was attributed to the I-3a transition observed in photoluminescence and commonly assigned to interstitial zinc.
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