期刊
JOURNAL OF DISPLAY TECHNOLOGY
卷 10, 期 11, 页码 939-944出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2014.2303148
关键词
Solution process; oxide thin-film transistor (TFT); zinc-tin-oxide; strontium; stability; NBIS
资金
- Industrial Strategic Technology Development Program, Development of Soluble TFT and Pixel Formation Materials/Process Technologies for AMOLED TV - MOTIE/KEIT [10045269]
We fabricated bottom-gate, bottom-contact oxide thin-film transistors (TFTs) using solution-processed strontium-doped zinc-tin-oxide (SrZTO) as the active material and high-aluminum oxide (AlOx) gate insulator at the maximum process temperature of 300 degrees C. The effect of Sr content on the device performance of the SrZTO TFTs was investigated, where Sr was changed from 0 to 20%. With increasing Sr concentration, threshold voltage shifted to the positive voltage, since the incorporation of Sr reduces the density of oxygen vacancy in ZTO. The mobility increases and threshold voltage shift to positive voltage with increasing Sr, and a 5% Sr doped ZTO transistor with AlO gate insulator exhibited the field effect mobility of 7.82 cm(2)/V.s, subthreshold swing of 121 mV/dec, and threshold voltage of 0.71 V. It is found that the threshold voltage shifts by negative bias illumination stress decrease with increasing Sr.
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