期刊
JOURNAL OF DISPLAY TECHNOLOGY
卷 10, 期 4, 页码 288-292出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2014.2298862
关键词
Thin-film transistors (TFTs); semiconductor device fabrication; tin compounds
资金
- Basic Science Research Program of the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2009-0065794]
- Soonchunhyang University
- National Research Foundation of Korea [2009-0065794] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, p-channel amorphous tin oxide thin-film transistors (TFTs) were fabricated. A vacuum thermal evaporation method with an SnO powder source was used to deposit the tin-oxide active layer. Thermal annealing in N-2 and oxygen plasma treatment were used as post-deposition treatments to obtain p-channel switching capabilities from the tin-oxide active layer. We have achieved a field effect mobility of 5.59 cm(2)V(-1)s(-1) with these TFTs. With their high mobility and low-cost fabrication process that is applicable to large-sized devices, they represent an advance toward practical oxide semiconductor technology.
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