期刊
JOURNAL OF CRYSTAL GROWTH
卷 404, 期 -, 页码 75-79出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2014.07.011
关键词
X-ray diffraction; Metal-organic chemical vapor deposition; Oxides; Semiconducting materials
资金
- National Natural Science Foundation of China [51072102]
- Science and Technology Commission of Shanghai Municipality [13111103700]
beta-Ga2O3 films have been homoepitaxially deposited on beta-Ga2O3 (1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) method. The influences of different growth temperatures on the structure, Raman and optical properties of the homoepitaxial films have been studied. The structure of the obtained films is monoclinic beta phase gallium oxide and the film deposited at 650 degrees C exhibits the best crystalline quality. The average transmittance of the samples in the visible and UV wavelength range is about 80%. The optical band gap of the films deposited at 600, 650 and 700 degrees C are about 4.72, 4.73 and 4.68 eV. respectively. (C) 2014 Elsevier B.V. All rights reserved.
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