In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy

标题
In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxy
作者
关键词
-
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 378, Issue -, Pages 430-434
出版商
Elsevier BV
发表日期
2013-01-01
DOI
10.1016/j.jcrysgro.2012.12.065

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