Degenerated MgZnO films obtained by excessive zinc

By introducing excessive zinc during the growth process, degenerated Mg0.46Zn0.54O films have been prepared. The resistivity of the Mg0.46Zn0.54O films is only 0.053 Omega cm, and the electron concentration is 1.0 x 10(19) cm(-3), which is well above the Mott concentration of ZnO (2.9x 10(19) cm(-3)). The origin of such a high electron concentration can be attributed to the excessive zinc in the films. The results reported in this paper provide a route to conductive degenerated MgZnO films, thus may lay a ground for the fabrication of ZnO-based heterostructures or deep ultraviolet optoelectronic devices. (C) 2012 Elsevier B.V. All rights reserved.