期刊
JOURNAL OF CRYSTAL GROWTH
卷 314, 期 1, 页码 85-91出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2010.10.170
关键词
Crystal structure; Stresses; X-ray diffraction; Metalorganic vapor phase epitaxy; Nitrides; Semiconducting gallium compounds
资金
- OSEO [PMII-AII/OSEO]
We report on the growth of thick GaN epilayers on 4-in. Si(1 1 1) substrates by metalorganic chemical vapor deposition. Using intercalated AlN layers that contribute to counterbalance the tensile strain induced by the thermal mismatch between gallium nitride and the silicon substrate, up to 6.7 mu m thick crack-free group Ill-nitride layers have been grown. Root mean-squares surface roughness of 0.5 nm, threading dislocation densities of 1.1 x 10(9) cm(-2), as well as X-ray diffraction (XRD) full widths at half-maximum (FWHM) of 406 arcsec for the GaN(0 0 2) and of 1148 arcsec for the GaN(3 0 2) reflection have been measured. The donor bound exciton has a low-temperature photoluminescence line width of 12 meV. The correlation between the threading dislocation density and XRD FWHM, as well as the correlation between the wafer curvature and the GaN in-plane stress is discussed. An increase of the tensile stress is observed upon n-type doping of GaN by silicon. (C) 2010 Elsevier B.V. All rights reserved.
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