The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate

标题
The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate
作者
关键词
-
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 312, Issue 14, Pages 2044-2048
出版商
Elsevier BV
发表日期
2010-04-02
DOI
10.1016/j.jcrysgro.2010.03.032

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