期刊
JOURNAL OF CRYSTAL GROWTH
卷 312, 期 4, 页码 520-526出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.11.036
关键词
3D nanowire network; Thermal vapor deposition; Tungsten oxide; Field emission
资金
- National Natural Science Foundation of China [50725206, U0634002, 50672135, 60571035, 50802117]
- Science and Technology Ministry of China [2003CB314701, 2007CB935501, 2008AA03A314]
- Science and Technology Department of Guangdong Province
- Department of Information Industry of Guangdong Province
- Science and Technology Department of Guangzhou City
Three-dimensional (3D) nanowire network is a potential building block for nanodevices. Films of 3D tungsten nanowire networks were found early, and the present study is to develop a technical procedure for achieving very high percentage of 3D tungsten nanowire networks in a film. We demonstrate that the content of 3D tungsten nanowire networks in a film, prepared by thermal vapor deposition, may be adjusted by controlling the temperature of substrate, and also that films of very high percentage of 3D tungsten nanowire networks may be prepared. It is found that all films exhibit stable field electron emission, but that the performance varies depending on content of 3D nanowire networks. (C) 2009 Elsevier B.V. All rights reserved.
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