期刊
JOURNAL OF CRYSTAL GROWTH
卷 311, 期 4, 页码 1195-1200出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.11.054
关键词
Nanowires; Growth from vapor; Physical vapor deposition process; Thermal evaporation; Gallium compounds
资金
- Institute of Information Technology Assessment (IITA)
- Ministry of Public Safety & Security (MPSS), Republic of Korea [C1090-0902-0023] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
beta-Ga2O3 nanowires with different diameters were successfully synthesized by adjusting the size of catalyst via a simple thermal evaporation of elemental gallium powder in argon ambient. The size of catalyst was controlled by adjusting the sputtering time. The critical size of catalyst, which can be provided as a seed of nanowires, was investigated in detail. In this work, we have found that the growth mechanism of nanowires can be changed on the basis of catalyst size. The Ga2O3 nanowires synthesized by the vapor-liquid-solid (VLS) mechanism were successfully grown on the catalyst with a diameter not exceeding 65 nm. The HRTEM results indicate that the growth direction of nanowires synthesized by the VLS mechanism strongly depends upon the crystal direction of the catalyst. (C) 2008 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据