MBE growth and patterned backgating of electron-hole bilayer structures

We report on the development of backgated independently contacted two-dimensional electron-hole bilayer devices suitable for carrying out transport measurements at low temperatures. A method for creating patterned backgates using conventional photolithography and a single-sided aligner is outlined along with the use of a conventional digital camera and commercially available infrared LEDs for checking the backside lithography at stages during this process. (C) 2008 Elsevier B.V. All rights reserved.