期刊
JOURNAL OF CRYSTAL GROWTH
卷 311, 期 19, 页码 4398-4401出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.07.043
关键词
X-ray diffraction; Atomic force microscopy; Photoluminescence; Molecular beam epitaxy; Zinc oxide
资金
- National Natural Science Foundation of China [50532050, 60806002, 60506014, 10874178, 10674133, 60776011]
- 973 Program [200608604906]
- Chinese Academy of Sciences
The polar and non-polar ZnO thin films were fabricated on cubic MgO (1 1 1) and (0 0 1) substrates by plasma-assisted molecular beam epitaxy. Based on X-ray diffraction analysis, the ZnO thin films grown on MgO (1 1 1) and (1 0 0) substrates exhibit the polar c-plane and non-polar m-plane orientation, respectively. Comparing with the c-plane ZnO film, the non-polar m-plane ZnO film shows crosshatched stripes-like morphology, lower surface roughness and slower growth rate. However, low-temperature photoluminescence measurement indicates the m-plane ZnO film has a stronger 3.31 eV emission, which is considered to be related to stacking faults. Meanwhile, stronger band tails absorbance of the m-plane ZnO film is observed in optical absorption spectrum. (C) 2009 Elsevier B.V. All rights reserved.
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