期刊
JOURNAL OF CRYSTAL GROWTH
卷 310, 期 23, 页码 5119-5122出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.07.061
关键词
Nanowires; Metalorganic vapor phase epitaxy; Antimonides; Gallium compounds
We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.
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