Chemical planarization of GaN using hydroxyl radicals generated on a catalyst plate in H2O2 solution

标题
Chemical planarization of GaN using hydroxyl radicals generated on a catalyst plate in H2O2 solution
作者
关键词
-
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 310, Issue 7-9, Pages 1637-1641
出版商
Elsevier BV
发表日期
2007-11-27
DOI
10.1016/j.jcrysgro.2007.11.093

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now