Growth of nanodots on a strained GaAs epilayer using scanning tunneling microscope

标题
Growth of nanodots on a strained GaAs epilayer using scanning tunneling microscope
作者
关键词
-
出版物
JOURNAL OF CRYSTAL GROWTH
Volume 310, Issue 7-9, Pages 2244-2247
出版商
Elsevier BV
发表日期
2007-11-14
DOI
10.1016/j.jcrysgro.2007.11.022

向作者/读者发起求助以获取更多资源

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started