期刊
JOURNAL OF COLLOID AND INTERFACE SCIENCE
卷 405, 期 -, 页码 242-248出版社
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2013.05.059
关键词
Cu2O; Homojunction; Interfacial charge transfer; Gas sensor
资金
- National Basic Research Program of China (973 Program) [2013CB632403]
- National Natural Science Foundation of China [21173103, 51172090]
- Science and Technology Developing Founding of Jilin Province [201115012]
In this study, the p-Cu2O/n-Cu2O homojunction film was prepared by a simple two-step electrodeposition method. The photoinduced charge transfer process in p-Cu2O/n-Cu2O homojunction film was studied using surface photovoltage technique. Then, the p-Cu2O/n-Cu2O homojunction film was assembled into a photoelectric gas sensor for sensing acetaldehyde both under 405 nm and 532 nm light irradiation at room temperature. For 532 nm light irradiation, excess photoinduced electrons migrate to the irradiated n-Cu2O side affected by the interfacial built-in electric field and promote desorption of acetaldehyde, which results in a higher sensitivity than that under 405 nm light. Our results demonstrated that constructing junction structure in photoelectric gas-sensing materials is an effective approach to achieve high sensitivity at room temperature. Crown Copyright (C) 2013 Published by Elsevier Inc. All lights reserved.
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