期刊
JOURNAL OF CHEMICAL THEORY AND COMPUTATION
卷 9, 期 5, 页码 2398-2403出版社
AMER CHEMICAL SOC
DOI: 10.1021/ct4000636
关键词
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资金
- STDF
- ITIDA (Egypt)
- computational resources at IBM T. J. Watson Research Center
Graphene nanomeshes (GNMs) formed by the creation of pore superlattices in graphene are a possible route to graphene-based electronics due to their semiconducting properties, including the emergence of fractional electronvolt band gaps. The utility of GNMs would be markedly increased if a scheme to stably, and controllably dope them was developed. In this work, a chemically motivated approach to GNM doping based on selective pore perimeter passivation and subsequent ion chelation is proposed. It is shown by first-principles calculations that ion chelation leads to stable doping of the passivated GNMs both n- and p-doping are achieved within a rigid band picture. Such chelated or crown GNM structures are stable, high mobility semiconducting materials possessing intrinsic doping concentration control; these can serve as building blocks for edge free graphene nanoelectronics including GNM-based complementary metal oxide semiconductor (CMOS)-type logic switches.
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