Article
Materials Science, Ceramics
Xiaojuan Lian, Zhixuan Gao, Xiang Wan, Qingying Ren, Xiaoyan Liu, Lei Wang
Summary: In this study, an optoelectronic device using phase-change materials (PCMs) was designed to demonstrate its perfect absorption characteristics and high-density storage capability. Both functionalities were evaluated experimentally and through simulations. The phase-change extent of the PCM layer was found to dynamically change the resonant wavelength of the device, allowing for perfect absorption. The use of amorphous bit arrays within a crystalline background showed promising potential for probe storage applications.
CERAMICS INTERNATIONAL
(2023)
Article
Multidisciplinary Sciences
Chengkuan Gao, Prabhav Gaur, Dhaifallah Almutairi, Shimon Rubin, Yeshaiahu Fainman
Summary: This study demonstrates the self-induced phase change effect based on light-liquid interaction for nanoscale computing. By utilizing the geometric changes of a thin liquid film to modulate optical properties, the researchers achieve nonlinear computation and memory capabilities in an optofluidic silicon photonics system.
NATURE COMMUNICATIONS
(2023)
Article
Computer Science, Information Systems
Amin Shafiee, Sudeep Pasricha, Mahdi Nikdast
Summary: Silicon photonics technology has enabled the integration of photonics in various fields and the combination with phase change materials provides an opportunity for adaptable and programmable photonic platforms. The programmability of phase change materials makes them promising candidates for photonic memory cells and architectures. However, challenges in the design and fabrication of phase-change photonic integrated circuits need to be addressed.
Article
Optics
Zhihai Liu, Siying Cheng, Yu Zhang, Wei Jin, Xiang Li, Yaru Li, Yaxun Zhang, Xinghua Yang, Jianzhong Zhang, Libo Yuan
Summary: This paper presents an all-fiber device with storage and logic computing functions, achieved using a single-mode fiber and GST material. The device utilizes pulse amplitude modulation to switch the GST state for data storage and implements all-optical logic operations through a series and parallel structure. The intelligent fiber has significant potential for applications in optical fiber communication and brain-like computing.
PHOTONICS RESEARCH
(2022)
Article
Multidisciplinary Sciences
Jingon Jang, Seonghoon Jang, Sanghyeon Choi, Gunuk Wang
Summary: By implementing additional filter evaluation and a simple run-off election-based decision rule in artificial neural network systems, confusion is reduced and training and inference performance is improved, leading to increased classification accuracy of the data set.
SCIENTIFIC REPORTS
(2021)
Article
Materials Science, Multidisciplinary
Lun Wang, Zixuan Liu, Zhuoran Zhang, Jiangxi Chen, Jinyu Wen, Ruizhe Zhao, Hao Tong, Xiangshui Miao
Summary: In this study, a refresh operation is proposed to solve the poor thermal stability issue of OTS selectors based on GeTe. The switching performance of GeTe selectors can be fully restored to the original level by the refresh operation and exhibit good consistency, making them applicable in the BEOL process. Furthermore, the endurance of the device is significantly improved after applying the refresh operation. The effectiveness of this refresh operation is also verified for OTS devices based on the commonly used GeSe system, suggesting its wide applicability to other OTS devices.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Physics, Applied
Benoit Sklenard, Francois Triozon, Chiara Sabbione, Lavinia Nistor, Michel Frei, Gabriele Navarro, Jing Li
Summary: This study investigates the electronic and thermal properties of GeTe/Sb2Te3 superlattices, finding small resistive contrast among different phases and low out-of-plane lattice thermal conductivity related to the number of VdW gaps. The findings highlight the importance of thermal improvement in GeTe/Sb2Te3 superlattice devices.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Syed Ghazi Sarwat, Timothy M. Philip, Ching-Tzu Chen, Benedikt Kersting, Robert L. Bruce, Cheng-Wei Cheng, Ning Li, Nicole Saulnier, Matthew BrightSky, Abu Sebastian
Summary: Phase-change memory devices are utilized in in-memory computing to compute without needing to transfer data between memory and processing units. The projection of phase configurations onto stable elements within the device is a promising approach to address nonidealities. By investigating the projection mechanism in prominent phase-change memory device architectures, such as the mushroom-type phase-change memory, the key attributes and operational principles of nanoscale projected Ge2Sb2Te5 devices are understood.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Jiarui Zhang, Wencheng Fang, Ruobing Wang, Chengxing Li, Jia Zheng, Xixi Zou, Sannian Song, Zhitang Song, Xilin Zhou
Summary: This study demonstrates the fabrication of high density phase change material arrays with a half-pitch down to around 70 nm through the co-optimization of lithography and plasma etching processes. By using sub-resolution assist features (SRAF) and optimizing etching parameters, uniform etching and improved reliability of the phase change material are achieved. These results lay a foundation for high density, uniformity, and reliability improvements in mass storage applications.
Article
Chemistry, Multidisciplinary
Xiaozhe Wang, Suyang Sun, Jiang-Jing Wang, Shuang Li, Jian Zhou, Oktay Aktas, Ming Xu, Volker L. Deringer, Riccardo Mazzarello, En Ma, Wei Zhang
Summary: The layered crystal structure of Cr2Ge2Te6 exhibits ferromagnetic ordering in the two-dimensional limit, making it a promising candidate for spintronic applications. However, the non-crystalline phase induced by external voltage pulses may lead to changes in the magnetic properties. This study demonstrates that Cr2Ge2Te6 preserves its spin-polarized nature in the amorphous phase but undergoes a magnetic transition to a spin glass state at low temperatures. Quantum-mechanical computations reveal that this transition is due to strong distortions in the Cr-Te-Cr bonds and the overall increase in disorder upon amorphization. The tunable magnetic properties of Cr2Ge2Te6 can be utilized for multifunctional magnetic phase-change devices that can switch between crystalline and amorphous states.
Article
Chemistry, Physical
Jin Zhao, Zhenhui Yuan, Xiaodan Li, Wen-Xiong Song, Zhitang Song
Summary: This study investigates Er-alloyed Sb/Te binary materials and finds that they exhibit high-speed writing capability. The impurity Er enhances the ability to form amorphous structures in Sb/Te, thereby improving device performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Multidisciplinary
Jiabin Shen, Wenxiong Song, Kun Ren, Zhitang Song, Peng Zhou, Min Zhu
Summary: Phase-change memory (PCM), with its significantly improved programming speed, has the potential to revolutionize data-storage technology. Through analysis of discovered phase-change materials and simulations, Sb-based PCM is predicted to have a superfast crystallization speed, achieving record-fast speeds in 60 nm-size devices. These findings open up opportunities for developing dynamic random-access memory (DRAM)-like and cache-like PCM using appropriate storage materials.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Xuesong Li, Pan Zeng, Feilong Wang, Dai Zhang, Yi Zhou, Rongqing Liang, Qiongrong Ou, Xiang Wu, Shuyu Zhang
Summary: The research demonstrates an artificial engram device based on nanoimprinted curable resin, meeting all requirements for artificial engrams such as synaptic plasticity, long memory storage time, and asymmetric memorizing-forgetting behavior. By comparing with biological counterparts, the concept of memory formation, manipulation, and implantation using the artificial engram device is illustrated.
NANOSCALE HORIZONS
(2021)
Article
Materials Science, Multidisciplinary
Rongchuan Gu, Meng Xu, Yongpeng Liu, Yinghua Shen, Chong Qiao, Cai-Zhuang Wang, Kai-Ming Ho, Songyou Wang, Ming Xu, Xiangshui Miao
Summary: Si doping plays a crucial role in OVTS materials by improving thermal stability and reducing threshold voltage. This study reveals the atomic mechanisms of Si doping in OVTS materials through first-principles calculations, providing a theoretical basis for the application of Si doping in OVTS materials.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Chemistry, Physical
Xiaotian Zeng, Xiaoqin Zhu, Yifeng Hu
Summary: We report a [C(5 nm)/Sb2Te3(12 nm)]5 phase-change heterostructure film with multilevel phase change properties and low resistance drift. The addition of carbon broke the Sb2Te3 bond and formed new C-Sb and C-Te bonds. The reliability of the phase-change heterostructure was confirmed using transmission electron microscopy. The amorphous resistance drift index of the C/Sb2Te3 film was effectively reduced, possibly due to structure relaxation. PCM devices based on C/Sb2Te3 phase-change heterostructure films also demonstrated the potential for multilevel storage. This research provides a new method for achieving multilevel phase-change memories with low resistance drift.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Nanoscience & Nanotechnology
Masato Takiguchi, Naotomo Takemura, Kouta Tateno, Kengo Nozaki, Satoshi Sasaki, Sylvain Sergent, Eiichi Kuramochi, Tabijah Wasawo, Atsushi Yokoo, Akihiko Shinya, Masaya Notomi
Article
Nanoscience & Nanotechnology
Masato Takiguchi, Satoshi Sasaki, Kouta Tateno, Edward Chen, Kengo Nozaki, Sylvain Sergent, Eiichi Kuramochi, Guoqiang Zhang, Akihiko Shinya, Masaya Notomi
News Item
Optics
Eiichi Kuramochi
Summary: The demonstration of an optical parametric oscillator using a photonic crystal microcavity shows promise for the future development of on-chip light sources in integrated quantum optics.
Article
Optics
Kenta Takata, Kengo Nozaki, Eiichi Kuramochi, Shinji Matsuo, Koji Takeda, Takuro Fujii, Shota Kita, Akihiko Shinya, Masaya Notomi
Summary: This study presents the first non-Hermitian nanophotonic platform, demonstrating spontaneous emission at exceptional points (EPs) through systematic tuning and independent current injection, revealing a clear EP phase transition and unique spectral features.
Article
Physics, Applied
Masato Takiguchi, Kengo Nozaki, Hisashi Sumikura, Naotomo Takemura, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Shinji Matsuo, Masaya Notomi
Summary: Our research found strong excitonic absorption and large nonlinear wavelength shifts in buried multiple-quantum-well photonic crystal L3 nanocavities, where carriers are effectively confined. Negligible carrier diffusion and well-suppressed surface recombination allow confined carriers to survive for as long as the radiative lifetime. The strong optical confinement and small mode volume provided by photonic crystals enhance excitonic nonlinearity, leading to a significant excitonic effect that induces large refractive index changes and cavity-frequency shifts. Our findings will aid in the development of ultralow energy all-optical switching devices in the future.
APPLIED PHYSICS LETTERS
(2021)
Article
Optics
Feng Tian, Hisashi Sumikura, Eiichi Kuramochi, Masato Takiguchi, Masaaki Ono, Akihiko Shinya, Masaya Notomi
Summary: This study hybridizes a silicon-integrated optomechanical resonator with two-level atom-like emitters to demonstrate an optomechanical cavity quantum electrodynamic (cQED) effect, achieving dynamic modulation of the spontaneous emission rate. The coupled-nanobeam optomechanical resonator exhibits a strong Purcell effect and high cavity-modulation performances. The experimental results are well explained by an analytical model combining optomechanical and cQED theories.
Article
Optics
Kenta Takata, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi
Summary: We have successfully designed an H1 photonic crystal nanocavity with a Q factor exceeding 108. By varying structural modulation parameters, we achieved such a high Q factor, while other nanocavities require more complex optimizations. This improvement in Q factor was achieved through a gradual variation in effective optical confinement potential. Our work elevates the performance of the H1 PCN to the ultrahigh-Q level and paves the way for its large-scale arrays with unconventional functionalities.
Article
Optics
N. Takemura, M. Takiguchi, H. Sumikura, E. Kuramochi, A. Shinya, M. Notomi
Proceedings Paper
Engineering, Electrical & Electronic
Koji Takeda, Takuro Fujii, Hidetaka Nishi, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo
2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Takuma Tsurugaya, Koji Takeda, Takuro Fujii, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi, Takaaki Kakitsuka, Hiroshi Fukuda, Shinji Matsuo
2019 COMPOUND SEMICONDUCTOR WEEK (CSW)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
M. Takiguchi, S. Sasaki, K. Tateno, C. Edward, K. Nozaki, S. Sergent, E. Kuramochi, G. Zhang, A. Shinya, M. Notomi
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
F. Tian, H. Sumikura, E. Kuramochi, M. Takiguchi, M. Ono, A. Shinya, M. Notomi
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Eiichi Kuramochi, Theo Martel, Shota Kita, Hideaki Taniyama, Akihiko Shinya, Masaya Notomi
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Kengo Nozaki, Shinji Matsuo, Takuro Fujii, Koji Takeda, Eiichi Kuramochi, Akihiko Shinya, Masaya Notomi
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
(2019)
Article
Optics
N. Takemura, M. Takiguchi, E. Kuramochi, A. Shinya, T. Sato, K. Takeda, S. Matsuo, M. Notomi
