4.6 Article

Oxygen-vacancy-induced room-temperature magnetization in lamellar V2O5 thin films

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JOURNAL OF APPLIED PHYSICS
卷 116, 期 16, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4899249

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资金

  1. CNPq
  2. Fundacao Araucaria [PRONEX 17386, 118/2010]
  3. [9232/2010]
  4. [11858/2011]

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In this work, we study the local atomic and electronic structures as well as oxygen-vacancy-induced magnetic properties of electrodeposited V2O5 films. Unlike stoichiometric V2O5, which is a diamagnetic lamellar semiconductor, our oxygen-defective V2O5 films are ferromagnetic at room-temperature and their saturation magnetization decreases with air exposure time. X-ray absorption spectroscopy was used to monitor the aging effect on these films, revealing that freshly-made samples exhibit only local crystalline order, whereas the aged ones undoubtedly show an enhancement of crystallinity and coordination symmetry. The mean number of oxygen atoms around V tends to increase, indicating a decrease of oxygen vacancies with time. Concurrently with the decrease of oxygen vacancies, a loss of saturation magnetization is also observed. Hence, it can be concluded that the ferromagnetism of the V2O5 films originates from a vacancy-induced mechanism, confirming the universality of this class of ferromagnetism. (C) 2014 AIP Publishing LLC.

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