期刊
JOURNAL OF APPLIED PHYSICS
卷 115, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4883541
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资金
- Office of Naval Research [N00014-11-1-0664]
- Army Research Office under DURIP Grant [W911NF-11-1-0283]
- U.S. DOE [DE-AC02-06CH11357]
We report on the electronic transport properties of epitaxial La1/3Sr2/3FeO3 films using temperature dependent resistivity, Hall effect, and magnetoresistance measurements. We show that the electronic phase transition, which occurs near 190 K, results in a change in conduction mechanism from nonadiabatic polaron transport at high temperatures to resistivity behavior following a power law temperature dependence at low temperatures. The phase transition is also accompanied by an abrupt increase in apparent mobility and Hall coefficient below the critical temperature (T*). We argue that the exotic low temperature transport properties are a consequence of the unusually long-range periodicity of the antiferromagnetic ordering, which also couples to the electronic transport in the form of a negative magnetoresistance below T* and a sign reversal of the Hall coefficient at T*. By comparing films of differing thicknesses, stoichiometry, and strain states, we demonstrate that the observed conduction behavior is a robust feature of La1/3Sr2/3FeO3. (C) 2014 AIP Publishing LLC.
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