期刊
JOURNAL OF APPLIED PHYSICS
卷 116, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4900193
关键词
-
资金
- National Key Basic Research Program of China [2015CB921401]
- Natural Science Foundation of China [51331002, 51371027, 11274371, 51431009, 51471183]
- PCSIRT
- China-Israel joint project [2013DFG13020]
- National Instrument Program of China [2012YQ120048]
Effect of the metal/oxide interface on spin-dependent transport properties in perpendicular [Co/Pt](3) multilayers was investigated. The saturation Hall resistivity (rho(xy)) is significantly increased by 45% with 1.4 nm thick CoO layer inserted at the top Co/MgO interface; whereas it is increased only 25% with 1 nm thick CoO layer at the bottom MgO/Co interface. The interfacial structures characterized by X-ray photoelectron spectroscopy show that the MgO/Co interface and Co/MgO interface including chemical states play a dominant role on spin-dependent transport, leading to different anomalous Hall behavior. (C) 2014 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据