期刊
JOURNAL OF APPLIED PHYSICS
卷 116, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4896764
关键词
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资金
- National Natural Science Foundation of China [51372002]
- Key Laboratory of Advanced Display and System Applications, Ministry of Education (Shanghai University) [P2014]
- Municipal Science & Technology Project of Wuhu [2013zd18]
X-ray photoelectron spectroscopy (XPS) was utilized to measure the valence band offset (Delta E-V) of the TiZnSnO (TZTO)/Si heterojunction. TZTO films were deposited on Si (100) substrates using magnetron sputtering at room temperature. By using the Zn 2p(3/2) and Sn 3d(5/2) energy levels as references, the value of Delta E-V was calculated to be 2.69 +/- 0.1 eV. Combining with the experimental optical energy band gap of 3.98 eV for TZTO extracted from the UV-vis transmittance spectrum, the conduction band offset (Delta E-C) was deduced to be 0.17 +/- 0.1 eV at the interface. Hence, the energy band alignment of the heterojunction was determined accurately, showing a type-I form. This will be beneficial for the design and application of TZTO/Si hybrid devices. (C) 2014 AIP Publishing LLC.
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