Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors
出版年份 2014 全文链接
标题
Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 116, Issue 7, Pages 074509
出版商
AIP Publishing
发表日期
2014-08-21
DOI
10.1063/1.4893470
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Photobias Instability of High Performance Solution Processed Amorphous Zinc Tin Oxide Transistors
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- Solution-Processed Zinc Oxide Thin-Film Transistors With a Low-Temperature Polymer Passivation Layer
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- Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs
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- Electrohydrodynamic Jet Spraying Technique for Oxide Thin-Film Transistor
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- Bias-Stress-Stable Solution-Processed Oxide Thin Film Transistors
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- High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing
- (2010) Taehwan Jun et al. JOURNAL OF MATERIALS CHEMISTRY
- Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors
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- Competitive surface effects of oxygen and water on UV photoresponse of ZnO nanowires
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- Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
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- Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
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