期刊
JOURNAL OF APPLIED PHYSICS
卷 115, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4865740
关键词
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资金
- China Scholarship Council
- Natural Science Foundation of China [61106010, 21101051, 21301044]
- Fundamental Research Funds for the Central Universities [2013HGXJ0195, 2012HGCX0003, 2013HGCH0012]
Gallium doped ZnxCd1-xS nanoribbons (NRs) with controlled composition were synthesized on Au-coated Si (100) substrates by a simple thermal co-evaporation method. The composition of ZnxCd1-xS:Ga NRs can be simply controlled by the distance of the substrates from the source powder. The grown NRs exhibit excellent crystallinity, with growth direction along [0002]. It is found that the gallium doping can remarkably enhance the conductivity of ZnxCd1-xS:Ga NRs, leading to obvious n-type conduction behavior. It is also observed that the ZnxCd1-xS:Ga NRs show sensitive photoresponse to visible light illumination with excellent stability and reproducibility. The generality of this study suggests the great potential of the ZnxCd1-xS:Ga NRs for future optoelectronics application. (C) 2014 AIP Publishing LLC.
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