Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

Absorption Characteristics of ${\rm GaAs}_{1-x}{\rm Bi}_{x}/{\rm GaAs}$ Diodes in the Near-Infrared

(2012) C. J. Hunter et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

(2012) Z. Batool et al.   JOURNAL OF APPLIED PHYSICS

Band engineering in dilute nitride and bismide semiconductor lasers

(2012) C A Broderick et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Photoluminescence investigation of high quality GaAs1−xBix on GaAs

(2011) A. R. Mohmad et al.   APPLIED PHYSICS LETTERS

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

(2011) K. J. Cheetham et al.   APPLIED PHYSICS LETTERS

Strained-Layer Quantum-Well Lasers

(2011) Alfred R. Adams   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Clustering effects in Ga(AsBi)

(2010) Sebastian Imhof et al.   APPLIED PHYSICS LETTERS

Efficiency limiting processes in 1.55 μm InAs/InP-based quantum dots lasers

(2010) Sayid A. Sayid et al.   APPLIED PHYSICS LETTERS

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

(2010) Hui-Xiong Deng et al.   PHYSICAL REVIEW B

Band offset determination of the GaAs/GaAsN interface using the density functional theory method

(2008) H-P Komsa et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate

(2008) Said Nacer et al.   OPTICAL AND QUANTUM ELECTRONICS