Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): Transmission electron microscopy characterization of growth defects

Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory

(2013) L. Tarnawska et al.   JOURNAL OF APPLIED PHYSICS

Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)

(2012) L. Tarnawska et al.   JOURNAL OF APPLIED PHYSICS

Local estimation of lattice constants in HRTEM images

(2011) T. Niermann et al.   ULTRAMICROSCOPY

Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN integration on Si (111)

(2010) L. Tarnawska et al.   JOURNAL OF APPLIED PHYSICS

Complex interface and growth analysis of single crystalline epi-Si(111)/Y2O3/ Pr2O3/Si(111) heterostructures: Strain engineering by oxide buffer control

(2010) A. Wilke et al.   SURFACE AND INTERFACE ANALYSIS

Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study

(2009) A. Giussani et al.   JOURNAL OF APPLIED PHYSICS

Spontaneous compliance of the InP∕SrTiO3 heterointerface

(2008) G. Saint-Girons et al.   APPLIED PHYSICS LETTERS

Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures

(2008) T Schroeder et al.   NEW JOURNAL OF PHYSICS