Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes
出版年份 2013 全文链接
标题
Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 12, Pages 124504
出版商
AIP Publishing
发表日期
2013-03-27
DOI
10.1063/1.4797488
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