Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

标题
Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 2, Pages 023510
出版商
AIP Publishing
发表日期
2013-01-11
DOI
10.1063/1.4774288

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search