Three-dimensional Poole-Frenkel analytical model for carrier transport in amorphous chalcogenides

Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5

(2012) P. Fantini et al.   APPLIED PHYSICS LETTERS

Role of vacancies in metal–insulator transitions of crystalline phase-change materials

(2012) W. Zhang et al.   NATURE MATERIALS

A Unified Hopping Model for Subthreshold Current of Phase-Change Memories in Amorphous State

(2010) Alessandro Calderoni et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study

(2009) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Monte Carlo simulation of charge transport in amorphous chalcogenides

(2009) Fabrizio Buscemi et al.   JOURNAL OF APPLIED PHYSICS

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B

Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

(2008) A. Pirovano et al.   SOLID-STATE ELECTRONICS