Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes

标题
Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 12, Pages 123501
出版商
AIP Publishing
发表日期
2013-03-23
DOI
10.1063/1.4798239

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