4.6 Article

Voltage-driven perpendicular magnetic domain switching in multiferroic nanoislands

期刊

JOURNAL OF APPLIED PHYSICS
卷 113, 期 19, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4804157

关键词

-

资金

  1. National Basic Research Program of China [2009CB623303]
  2. NSF of China [11234005, 50921061]
  3. NSF [DMR-1006541]
  4. NSF Major Research Instrumentation Program [OCI-0821527]
  5. Materials Simulation Center
  6. Graduated Education and Research Services at the Pennsylvania State University
  7. Direct For Mathematical & Physical Scien
  8. Division Of Materials Research [1006541] Funding Source: National Science Foundation

向作者/读者索取更多资源

We show that, using phase-field simulations, large voltage-driven perpendicular magnetic domain switching can be realized in magnetic-ferroelectric nanoislands with relieved substrate constraint, which is difficult in continuous multiferroic layered thin films due to significant substrate clamping. The as-grown magnetic and ferroelectric domain structures in the heterostructured nanoislands can be tailored by engineering their respective geometric sizes and/or the underlying substrate strain. Influences of the lateral size of the island on the dynamic voltage-driven magnetic domain switching are addressed, whereby an optimum lateral size is identified for illustration. Thus, such three-dimensional multiferroic nanoislands should provide great flexibilities for designing novel high-density spintronic/microelectronic devices with purely voltage-driven means. (C) 2013 AIP Publishing LLC.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据