4.6 Article

Carrier density dependence of the magnetic properties in iron-doped Bi2Se3 topological insulator

期刊

JOURNAL OF APPLIED PHYSICS
卷 113, 期 4, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4788834

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资金

  1. National Basic Research Programm of China [2012CB927401, 2011CB921902, 2013CB921902, 2011CB922200]
  2. NSFC [91021002, 11174199, 11134008, 11274228, 51172143, 51072115]
  3. MOST of China [2012CB821404]
  4. Shanghai Committee of Science and Technology, China [11JC1405000, 11PJ1405200, 12JC1405300]
  5. Shanghai Municipal Education Commission [11ZZ17]
  6. SRF for ROCS, SEM
  7. Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning

向作者/读者索取更多资源

The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained. Effective magnetic moments for each Fe atom was estimated as small as about 0.07 mu(B). Magnetic and non-magnetic phases separation was observed in all samples. Our results suggest that the bulk ferromagnetism in Fe-doped Bi2Se3 is not intrinsic and regardless of carrier density. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788834]

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