Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise

标题
Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 111, Issue 7, Pages 073701
出版商
AIP Publishing
发表日期
2012-04-03
DOI
10.1063/1.3691224

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