Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer
出版年份 2012 全文链接
标题
Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 111, Issue 9, Pages 093520
出版商
AIP Publishing
发表日期
2012-05-08
DOI
10.1063/1.4709732
参考文献
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