The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces

We have measured the electronic structure at Au nanoisland-niobium doped SrTiO3 interfaces over a range of contact diameters. Electron transport processes at the interface transition from thermionic emission dominated to tunneling dominated, leading to ohmic behavior at small sizes. The transition increases at a much higher rate than is generally expected, emphasizing the need for precise control of nanoscale dimensions for reproducible effects in nanoscale electronic devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693542]