Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition

标题
Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 111, Issue 1, Pages 013502
出版商
AIP Publishing
发表日期
2012-01-04
DOI
10.1063/1.3673538

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