Understanding Si(111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology

The Investigation of Crystallization of a-Si Films Deposited on Different Orientations by Solid Phase Epitaxy Process

(2013) Kyuyoul Lee et al.   PRAKTISCHE METALLOGRAPHIE-PRACTICAL METALLOGRAPHY

Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

(2012) Luis A. Marqués et al.   JOURNAL OF APPLIED PHYSICS

Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon

(2011) Ignacio Martin-Bragado et al.   APPLIED PHYSICS LETTERS

The curious case of thin-body Ge crystallization

(2011) R. Duffy et al.   APPLIED PHYSICS LETTERS

{111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo

(2011) Ignacio Martin-Bragado   APPLIED PHYSICS LETTERS

Importance of twin defect formation created by solid-phase epitaxial growth: An atomistic study

(2011) Ignacio Martin-Bragado   SCRIPTA MATERIALIA

Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model

(2009) Ignacio Martin-Bragado et al.   APPLIED PHYSICS LETTERS

Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects

(2009) E. Lampin et al.   JOURNAL OF APPLIED PHYSICS

Stressed multidirectional solid-phase epitaxial growth of Si

(2009) N. G. Rudawski et al.   JOURNAL OF APPLIED PHYSICS

Modeling two-dimensional solid-phase epitaxial regrowth using level set methods

(2009) S. Morarka et al.   JOURNAL OF APPLIED PHYSICS

Atomistic examinations of the solid-phase epitaxial growth of silicon

(2009) B.A. Gillespie et al.   JOURNAL OF CRYSTAL GROWTH

Atomistic considerations of stressed epitaxial growth from the solid phase

(2009) N.G. Rudawski et al.   SCRIPTA MATERIALIA