期刊
JOURNAL OF APPLIED PHYSICS
卷 112, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4747932
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资金
- Deutsche Forschungsgemeinschaft [TRR 80]
Charge transfer predicted by standard models is at odds with Pauling's electronegativities but can be reconciled by the introduction of a cluster formation model [Schwingenschlogl et al., Appl. Phys. Lett. 96, 242107 (2010)]. Using electronic structure calculations, we investigate p- and n-type doping in silicon and diamond in order to facilitate comparison as C has a higher electronegativity compared to Si. All doping conditions considered can be explained in the framework of the cluster formation model. The implications for codoping strategies and dopant-defect interactions are discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747932]
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