Scanning tunneling microscopy/spectroscopy studies of resistive switching in Nb-doped SrTiO3

Comment on “Controllable local modification of fractured Nb-doped SrTiO3 surfaces” [Appl. Phys. Lett. 95, 163107 (2009)]

(2011) Y. L. Chen et al.   APPLIED PHYSICS LETTERS

TiO2—a prototypical memristive material

(2011) K Szot et al.   NANOTECHNOLOGY

Vacancy defects in strontium titanate: Ab initio calculation

(2010) M. Djermouni et al.   COMPUTATIONAL MATERIALS SCIENCE

Oxygen electromigration induced nonvolatile resistance switching at Ag/La2CuO4+x interface

(2009) J. P. Shi et al.   APPLIED PHYSICS LETTERS

Controllable local modification of fractured Nb-doped SrTiO3 surfaces

(2009) TeYu Chien et al.   APPLIED PHYSICS LETTERS

In situ TEM studies of oxygen vacancy migration for electrically induced resistance change effect in cerium oxides

(2009) Peng Gao et al.   MICRON

Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3

(2008) Ruth Muenstermann et al.   APPLIED PHYSICS LETTERS

Photoresponse of the Schottky junction Au/SrTiO3:Nb in different resistive states

(2008) D. S. Shang et al.   APPLIED PHYSICS LETTERS

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Scanning probe microscopy of oxide surfaces: atomic structure and properties

(2008) D A Bonnell et al.   REPORTS ON PROGRESS IN PHYSICS