期刊
JOURNAL OF APPLIED PHYSICS
卷 112, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4768726
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资金
- EPSRC [GR/S94148]
Thin films of CuCrO2 have been grown on Al2O3(001) substrates by oxygen plasma assisted molecular beam epitaxy. With a substrate temperature of 700 degrees C or 750 degrees C, the films showed an unanticipated (015) orientation but at a higher substrate temperature of 800 degrees C the expected basal (001) orientation predominates. The optical absorption spectrum of CuCrO2 shows a direct allowed absorption onset at 3.18 eV together with a weak peak at 2.0 eV which is suppressed by Sn doping. This suggests that the low energy peak should be attributed to 3d -> 3d excitations associated with Cu2+ defect states rather than excitations localised on Cr3+. Valence band X-ray photoemission spectra of (001) and (015) oriented CuCrO2 are compared with those obtained from polycrystalline samples. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768726]
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