Article
Chemistry, Physical
Larbi Boukezzi, Sebastien Rondot, Omar Jbara, Sherif S. M. Ghoneim, Ahmed Boubakeur, Saad A. Mohamed Abdelwahab
Summary: This study investigated the effect of isothermal conditions on the trapping/detrapping process of charges in e-beam irradiated thermally aged XLPE insulation. The results showed significant differences between fresh and aged materials in terms of trapping and detrapping behavior, with temperature and thermal aging affecting the parameters.
Article
Chemistry, Physical
E. Krishnan Vishnu, Anoop Ajaya Kumar Nair, K. George Thomas
Summary: The study investigates the photoluminescence fluctuations in CdSe QDs by varying core size and maintaining constant shell thickness. Increase in core size leads to enhanced detrapping rate and higher photoluminescence efficiency.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Nanoscience & Nanotechnology
Xiaolei Ma, Yue-Yang Liu, Lang Zeng, Jiezhi Chen, Runsheng Wang, Lin-Wang Wang, Yanqing Wu, Xiangwei Jiang
Summary: The study proposed a novel atomistic framework to simulate electronic processes across the MoS2-SiO2 interface, revealing the distinct CT/CDT behavior of different types of atomic defects and identifying the defect type(s) most likely responsible for hysteresis. Results showed that single Si-dangling bond defects are active electron trapping centers, while single O-dangling bond defects are active hole trapping centers, more likely to cause hysteresis.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Fang-Jui Chu, Yu-Chieh Chen, Li-Chung Shih, Shi-Cheng Mao, Jen-Sue Chen
Summary: In this study, a dual-gate ferroelectric polymer P(VDF-TrFE)-coupled IGZO thin-film transistor is proposed, which exhibits both short- and long-term memory functionalities and can be utilized in the reservoir and readout layers of neuromorphic computers. This technology holds significant potential for next-generation hybrid intelligent applications.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
Manuel Fregolent, Enrico Brusaterra, Carlo De Santi, Kornelius Tetzner, Joachim Wuerfl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Summary: This paper extensively characterizes and models the threshold voltage instability in lateral beta-Ga2O3 MOSFETs with Al2O3 gate dielectric. It is found that the instability is caused by electron trapping at gate dielectric border traps near the Al2O3/beta-Ga2O3 interface. Logarithmic kinetics were detected for both stress and recovery processes using an innovative fast-capacitance experimental setup, and a generalized model that accurately reproduces the experimental results is proposed.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Multidisciplinary
A. F. Latypova, A. V. Maskaev, L. G. Gutsev, N. A. Emelianov, I. E. Kuznetsov, P. M. Kuznetsov, S. L. Nikitenko, Y. V. Baskakova, A. V. Akkuratov, E. A. Komissarova, L. A. Frolova, S. M. Aldoshin, P. A. Troshin
Summary: A new series of conjugated polymers were introduced as hole transport materials for perovskite solar cells, which achieved high efficiency and operational stability through rational design, and the origin of stability was revealed through advanced microscopy and theoretical calculations.
MATERIALS TODAY CHEMISTRY
(2022)
Article
Engineering, Electrical & Electronic
N. Modolo, C. De Santi, G. Baratella, A. Bettini, M. Borga, N. Posthuma, B. Bakeroot, S. You, S. Decoutere, A. Bevilacqua, A. Neviani, G. Meneghesso, E. Zanoni, M. Meneghini
Summary: This article proposes a methodology for modeling the dynamic characteristics of GaN power HEMTs, considering the realistic trapping/detrapping kinetics described by stretched exponentials. The analysis accurately describes stretched-exponential transients and extracts the related parameters, and reproduces the stretched exponential behavior using multiple RC networks.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Optics
S. Delice, M. Isik, N. M. Gasanly
Summary: This study investigated the structural, optical, and thermoluminescence properties of TlGaS2 single crystals, revealing their potential applications in 2D structures. The crystal exhibited a monoclinic unit cell structure with distinct peaks in the XRD pattern, while the band gap and Urbach energies were determined to be 2.57 and 0.25 eV, respectively. Thermoluminescence measurements showed a TL peak with a maximum temperature of 573 K, indicating the presence of a deep trapping level with an activation energy of around 0.92 eV. Additionally, the TL peak temperature was found to shift towards higher temperatures with increasing heating rates.
JOURNAL OF LUMINESCENCE
(2022)
Article
Physics, Applied
Francesco M. D. Pellegrino, Giuseppe Falci, Elisabetta Paladino
Summary: In this study, we investigate the second spectrum of charge carrier density fluctuations in graphene using the McWorther model, where noise is generated by electron traps in the substrate. By considering a wide distribution of switching rates of the electron traps, we find that the carrier density power spectrum exhibits a non-trivial structure on the scale of the measurement bandwidth, which can be explained by the presence of a 1/f component in the Gaussian part of the spectrum. Additionally, we observe that the non-Gaussian part of the spectrum becomes significant at extremely low temperatures.
APPLIED PHYSICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Ching-Kang Shen, Rajneesh Chaurasiya, Kuan-Ting Chen, Jen-Sue Chen
Summary: In this study, a simple and cost-effective ferroelectric-coupled zinc-tin oxide thin-film transistor was reported for artificial synaptic devices. The device demonstrated superior artificial synapse responses and successfully emulated important features of synaptic behavior, highlighting its potential as a hardware candidate for neuromorphic computing.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Sin-En Li, Guan-Zhang Lu, Ji-Lin Shen, Meng-Jer Wu, Yu-Ting Chen, Mujahid Mustaqeem, Yang-Fang Chen
Summary: This study presents a first attempt to achieve multifunctional nonvolatile memory based on all 2D heterostructures, demonstrating long-term stability and nonvolatile characteristics under both optical and electrical control signals.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Shivendra Kumar Singh, Bang-Ren Chen, Zhen-Hong Huang, Tian-Li Wu, Yogesh Singh Chauhan
Summary: In this work, the trapping and detrapping kinetics under positive and negative bias stress in 4H-SiC MOS-capacitors are successfully modeled for the first time by incorporating inhibition dynamics. The developed analytical model based on the inhibition mechanism provides valuable insights into understanding positive/negative bias instability in SiC technology and estimates the location of the trap 1 nm from the dielectric/SiC interface.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Multidisciplinary
Andrew W. Gunn, Makhluk Hossain Prio, Durga Gajula, Goutam Koley
Summary: This study investigates photon-assisted trapping and detrapping of electrons injected from the gate in a heterostructure field-effect transistor (HFET) under negative bias. It is found that sub-bandgap laser illumination significantly affects the electron injection rate from the gate. The trapped electrons reduce the density of the two-dimensional electron gas (2DEG) at the AlGaN/GaN heterointerface but can be emitted by sub-bandgap photons, leading to a recovery of 2DEG density. The trapping and detrapping dynamics depend on the wavelength and focal position of the laser, as well as the gate bias stress time prior to HFET illumination.
Article
Materials Science, Coatings & Films
Stephan Maendl, Jurgen W. Gerlach, Darina Manova
Summary: This study investigates the nitrogen transport and formation of CrN phase in expanded austenite, finding that the occurrence of CrN phase leads to nitrogen trapping.
SURFACE & COATINGS TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Ruben Asanovski, Pierpaolo Palestri, Enrico Caruso, Luca Selmi
Summary: This study presents a complete set of expressions to explain the MOSFET gate and drain power spectral densities resulting from the trapping/detrapping of channel carriers into the gate dielectric. The findings highlight the importance of trap's position-dependent terms for devices with thin gate dielectrics, and show that TDN contributes to gate current noise and is correlated with drain current fluctuations. The validation of model expressions through comparison with TCAD simulations could lead to more accurate trap density extraction and enable the development of comprehensive compact models for TDN in MOSFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Review
Energy & Fuels
Chao Tang, Bo Huang, Miao Hao, Zhiqiang Xu, Jian Hao, George Chen
Article
Physics, Applied
Y. Wang, M. Hao, Z. Xu, D. Qiang, G. Chen, A. Vaughan
APPLIED PHYSICS LETTERS
(2018)
Article
Physics, Applied
Yan Wang, Dayuan Qiang, Zhiqiang Xu, George Chen, Alun Vaughan
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2018)
Article
Engineering, Electrical & Electronic
Bo Huang, Zhiqiang Xu, Miao Hao, George Chen
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION
(2019)
Article
Instruments & Instrumentation
Siyu Zhang, George Chen, Zhiqiang Xu, Jiaqi Yan, Zongren Peng, Peng Liu
REVIEW OF SCIENTIFIC INSTRUMENTS
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Yunpeng Zhan, George Chen, Miao Hao, Zhiqiang Xu, Lu Pu, Xuefeng Zhao, Haofei Sun, Sen Wang, Anxiang Guo, Jian Liu
PROCEEDINGS OF THE 21ST INTERNATIONAL SYMPOSIUM ON HIGH VOLTAGE ENGINEERING, VOL 1
(2020)
Article
Physics, Applied
Yan Wang, Dayuan Qiang, Fuad N. F. Alhabill, Zhiqiang Xu, George Chen, Alun Vaughan
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2018)
Proceedings Paper
Engineering, Electrical & Electronic
Zhiqiang Xu, Miao Hao, Bo Huang, George Chen, Matt Praeger, Paul Lewin
2017 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENON (CEIDP)
(2017)
Proceedings Paper
Engineering, Electrical & Electronic
Bo Huang, Miao Hao, Zhiqiang Xu, George Chen, Xia Wang, Chao Tang, Hao Jian, Qian Wang
2017 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENON (CEIDP)
(2017)
Proceedings Paper
Engineering, Electrical & Electronic
Z. Xu, G. Chen, M. Praeger, P. Lewin
2017 IEEE 19TH INTERNATIONAL CONFERENCE ON DIELECTRIC LIQUIDS (ICDL)
(2017)
Proceedings Paper
Engineering, Electrical & Electronic
Bo Huang, Miao Hao, Zhiqiang Xu, George Chen, Xia Wang, Qian Wang, Yingkai Long
2017 IEEE 19TH INTERNATIONAL CONFERENCE ON DIELECTRIC LIQUIDS (ICDL)
(2017)
Proceedings Paper
Engineering, Electrical & Electronic
Zhiqiang Xu, Wen Su, George Chen
2016 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA (IEEE CEIDP)
(2016)
Proceedings Paper
Engineering, Electrical & Electronic
Zhiqiang Xu, Meng Guo, Michel Frechette, Eric David, George Chen
2016 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA (IEEE CEIDP)
(2016)
Proceedings Paper
Engineering, Electrical & Electronic
Zhiqiang Xu, George Chen, Paul Lewin, Steve Swingler
2015 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA (CEIDP)
(2015)
Proceedings Paper
Engineering, Electrical & Electronic
Zhiqiang Xu, George Chen, Meng Guo, Eric David, Michel Frechette
2015 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA (CEIDP)
(2015)